Analysis Of Fused Thiophene Polymer Field Effect Transistors

The purpose of this project is to analyze the electrical characteristics of a fused thiophene polymer developed by Corning. Analysis was done by building field effect transistors and testing their properties under controlled conditions. Particular attention was paid to threshold voltages and calculated mobility by studying them under pulsed and continuous gate bias. The conditions studied were under vacuum and in the ambient. Ambient studies were done in air and a nitrogen rich environment. The tested devices showed good stability in the different ambient environments. Under vacuum the polymer exhibited low off-current and stable threshold voltages comparable to other thiophene systems. Bias stress results showed good recovery times and small threshold shifts under a low gate bias.